NTMS4705N
Power MOSFET
30 V, 12 A, Single N-Channel, SO-8
Features
? Low R DS(on)
? Low Gate Charge
? Standard SO-8 Single Package
? Pb-Free Package is Available
Applications
? Notebooks, Graphics Cards
? Synchronous Rectification
? High Side Switch
? DC-DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) TYP
8.0 m W @ 10 V
10.5 m W @ 4.5 V
N-Channel
D
I D MAX
(Note 1)
12 A
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate-to-Source Voltage
V GS
± 20
V
G
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
10
7.2
A
S
t v 10 s
T A = 25 ° C
12
Power Dissipation
(Note 1)
Steady
State
t v 10 s
T A = 25 ° C
P D
1.52
2.3
W
MARKING DIAGRAM/
PIN ASSIGNMENT
Continuous Drain
Current (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
7.4
5.3
A
1
Source
Source
1
8
Drain
Drain
Power Dissipation
(Note 2)
Pulsed Drain Current
T A = 25 ° C
t p = 10 m s
P D
I DM
0.85
36
W
A
SO-8
CASE 751
STYLE 12
Source
Gate
Top View
Drain
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
(V DD = 25 V, V GS = 10 V, Peak I L = 7.5 A,
L = 10 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J ,
T stg
I S
E AS
T L
-55 to
150
3.0
210
260
° C
A
mJ
° C
4705N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
THERMAL RESISTANCE MAXIMUM RATINGS
Device
Package
Shipping ?
Parameter
Symbol
Value
Unit
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t v 10 s (Note 1)
R q JA
R q JA
82
55
° C/W
NTMS4705NR2
NTMS4705NR2G
SO-8
SO-8
(Pb-Free)
2500/Tape & Reel
2500/Tape & Reel
R q JA
Junction-to-Ambient – Steady State (Note 2) 147
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 3
1
Publication Order Number:
NTMS4705N/D
相关PDF资料
NTMS4706NR2G MOSFET N-CH 30V 6.4A 8-SOIC
NTMS4800NR2G MOSFET N-CH 30V 4.9A 8-SOIC
NTMS4801NR2G MOSFET N-CH 30V 7.5A 8-SOIC
NTMS4802NR2G MOSFET N-CH 30V 11.1A 8-SOIC
NTMS4807NR2G MOSFET N-CH 30V 9.1A 8-SOIC
NTMS4816NR2G MOSFET N-CH 30V 6.8A 8-SOIC
NTMS4840NR2G MOSFET N-CH 30V 4.5A 8SOIC
NTMS4872NR2G MOSFET N-CH 30V 6A 8-SOIC
相关代理商/技术参数
NTMS4706N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4706NR2 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4706NR2G 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4800N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4800NR2G 功能描述:MOSFET 30V 8A 0.020OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4801N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4801NR2G 功能描述:MOSFET NFET SO8 30V 9.9A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4802N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, N−Channel, SO−8